A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

摘要

A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastictunneling conduction due to the low quality of the amorphous barrier layerand/or the junction interface.